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For the Inventor, By the Inventor

Kirchheim, Germany

Jenoe Tihanyi

This inventor holds 120 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Technology (CPC class H01L2-976). Top assignees: Siemens Aktiengesellschaft, Infineon Technologies Ag, Siced Electronics Development Gmbh & Co Kg. Active years: 1976-2011.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Jenoe Tihanyi. Retrieved from https://idiyas.com/inventor/jenoe-tihanyi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 120

% Patents Active = 94.2


Average Co-Inventor Count = 1.5

ph-index = 24

Forward Citations = 2,405(Granted Patents)

Forward Citations (Not Self Cited) = 2,368(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Neuried, DE (1977)
  • Muenchen, DE (1989)
  • 8000 Muenchen 70, DE (1991)
  • Munchen, DE (1993 - 1995)
  • Munich, DE (1976 - 2001)
  • Kircheim, DE (2000 - 2004)
  • Kirchheim, DE (1996 - 2011)

Company Filing History:

goldMedal67 out of 30,867 
 
Siemens Aktiengesellschaft
 patents
silverMedal49 out of 15,023 
 
Infineon Technologies Ag
 patents
bronzeMedal1 out of 20 
 
Siced Electronics Development Gmbh & Co Kg
 patents
4. 3 out of 834,453 
Other
 patents

Years Active: 1976-2011

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Areas of Expertise:
Semiconductor Component
MOSFET Circuit
Power Transistor
Integrated Circuit
Field-Effect Transistor
High Voltage
Edge Termination
Temperature Monitoring
Junction Field-Effect
Lateral Configuration
Switching Element
Drift Zone
120 patents (USPTO):Explore Patents
1. 7999343 - Semiconductor component with a space-saving edge termination, and method for production of such component (2011-08-16),
2. 7724064 - Circuit arrangement having a transistor component and a freewheeling element (2010-05-25),
3. 7560783 - Metal-semiconductor contact, semiconductor component, integrated circuit arrangement and method (2009-07-14),
4. 7492208 - MOSFET circuit having reduced output voltage oscillations during a switch-off operation (2009-02-17),
5. 7453308 - Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor (2008-11-18),
6. 7423325 - Lateral field-effect-controllable semiconductor component for RF applications (2008-09-09),
7. 7301204 - SOI component with increased dielectric strength and improved heat dissipation (2007-11-27),
8. 7211846 - Transistor having compensation zones enabling a low on-resistance and a high reverse voltage (2007-05-01),
9. 7173306 - Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone (2007-02-06),
10. 7148736 - Power switch (2006-12-12),
11. 7091573 - Power transistor (2006-08-15),
12. 7087981 - Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method (2006-08-08),
13. 7050763 - Method and device for transferring a signal from a signal source to a signal sink in a system (2006-05-23),
14. 7049656 - Field-effect-controllable semiconductor configuration with a laterally extending channel zone (2006-05-23),
15. 6891204 - Semiconductor component having field-shaping regions (2005-05-10),

Title: Jenoe Tihanyi: Pioneering Innovations in Semiconductor Technology

Introduction:

Jenoe Tihanyi, a prolific inventor based in Kirchheim, Germany, has made significant contributions to the field of semiconductor technology. With an impressive total of 120 patents to his name, Tihanyi has been instrumental in advancing cutting-edge solutions in the industry.

Latest Patents:

Tihanyi's recent patents showcase his expertise and innovation in semiconductor components. One notable invention is the "Semiconductor component with a space-saving edge termination," which introduces an innovative edge structure design for enhanced performance. Additionally, his patent on the "Circuit arrangement having a transistor component and a freewheeling element" demonstrates his commitment to developing efficient circuit designs.

Career Highlights:

Throughout his career, Jenoe Tihanyi has worked with renowned companies such as Siemens Aktiengesellschaft and Infineon Technologies Ag. His expertise and dedication have played a pivotal role in driving technological advancements within these organizations, solidifying his reputation as a leader in the semiconductor industry.

Collaborations:

Tihanyi's collaborations with esteemed colleagues such as Ludwig Leipold and Roland Weber have resulted in groundbreaking innovations. By working together, they have overcome challenges, exchanged ideas, and collectively contributed to the development of new technologies that have shaped the industry.

Conclusion:

In conclusion, Jenoe Tihanyi's remarkable journey as an inventor underscores the power of innovation and the impact of one individual on shaping the future of technology. His legacy serves as an inspiration to aspiring inventors, encouraging them to think boldly and push the boundaries of what is achievable in the realm of invention. Tihanyi's innovative spirit and relentless pursuit of excellence continue to drive progress and pave the way for the next generation of innovators in the semiconductor field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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