The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 06, 2007
Filed:
Aug. 27, 2004
Applicants:
Franz Hirler, Isen, DE;
Ralf Henninger, München, DE;
Frank Pfirsch, München, DE;
Markus Zundel, Taufkirchen, DE;
Jenoe Tihanyi, Kirchheim, DE;
Inventors:
Franz Hirler, Isen, DE;
Ralf Henninger, München, DE;
Frank Pfirsch, München, DE;
Markus Zundel, Taufkirchen, DE;
Jenoe Tihanyi, Kirchheim, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
The invention relates to a method for fabricating a drift zone of a vertical semiconductor component and to a vertical semiconductor component having the following features:
Hirler, Franz. (2007). Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone (U.S. Patent No. 7173306). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/7173306
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile