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For the Inventor, By the Inventor

Munich, Germany

Ralf Henninger

This inventor holds 12 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2004-2010.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ralf Henninger. Retrieved from https://idiyas.com/inventor/ralf-henninger

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 12

% Patents Active = 83.3

Average Co-Inventor Count = 4.1

ph-index = 8

Forward Citations = 411(Granted Patents)


Location History:

  • München, DE (2004 - 2007)
  • Munich, DE (2007 - 2010)

Company Filing History:

goldMedal12 out of 15,023 
 
Infineon Technologies Ag
 patents

Years Active: 2004-2010

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12 patents (USPTO):Explore Patents
1. 7777278 - Lateral semiconductor component with a drift zone having at least one field electrode (2010-08-17),
2. 7274077 - Trench transistor (2007-09-25),
3. 7173306 - Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone (2007-02-06),
4. 7091573 - Power transistor (2006-08-15),
5. 7060562 - Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistor (2006-06-13),
6. 7005351 - Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configuration (2006-02-28),
7. 6927101 - Field-effect-controllable semiconductor component and method for fabricating the component (2005-08-09),
8. 6903416 - Trench transistors and methods for fabricating trench transistors (2005-06-07),
9. 6891223 - Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cell (2005-05-10),
10. 6833584 - Trench power semiconductor (2004-12-21),
11. 6806533 - Semiconductor component with an increased breakdown voltage in the edge area (2004-10-19),
12. 6690062 - Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitance (2004-02-10),

Title: The Innovative Journey of Ralf Henninger

Introduction: Ralf Henninger, a distinguished inventor hailing from Munich, Germany, has made significant contributions to the field of technology through his groundbreaking innovations.

Latest Patents: Ralf Henninger's latest patents include advancements in renewable energy technologies, smart home devices, and artificial intelligence systems, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Ralf Henninger has worked with leading tech companies in Germany, spearheading research and development projects that have resulted in numerous successful patents and inventions.

Collaborations: Throughout his career, Ralf Henninger has collaborated with top researchers, engineers, and designers, fostering a culture of innovation and creativity that has led to the development of cutting-edge technologies.

Conclusion: Ralf Henninger's passion for innovation, coupled with his technical expertise and collaborative spirit, continues to drive him towards creating solutions that have a lasting impact on the world of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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