The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 21, 2004
Filed:
Jun. 10, 2002
Applicant:
Inventors:
Ralf Henninger, München, DE;
Franz Hirler, Isen, DE;
Manfred Kotek, Villach, AT;
Joost Larik, Poing, DE;
Markus Zundel, Taufkirchen, DE;
Assignee:
Infineon Technologies AG, Munich, DE;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/976 ;
U.S. Cl.
CPC ...
H01L 2/976 ;
Abstract
A trench power semiconductor component is described which has an edge cell in which an edge trench is provided. The edge trench, at least on an outer side wall, has a thicker insulating layer than an insulating layer of trenches of the cell array. This simple configuration provides a high dielectric strength and is economical to produce.