The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2006
Filed:
Sep. 18, 2003
Applicants:
Franz Hirler, Isen, DE;
Jenoe Tihanyi, Kirchheim, DE;
Ralf Henninger, München, DE;
Joachim Krumrey, München, DE;
Martin Poelzl, Ossiach, AT;
Walter Rieger, Arnoldstein, AT;
Inventors:
Franz Hirler, Isen, DE;
Jenoe Tihanyi, Kirchheim, DE;
Ralf Henninger, München, DE;
Joachim Krumrey, München, DE;
Martin Poelzl, Ossiach, AT;
Walter Rieger, Arnoldstein, AT;
Assignee:
Infineon Technologies AG, Munich, DE;
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2006.01); H01L 31/113 (2006.01);
U.S. Cl.
CPC ...
Abstract
The power transistor has a trench cell in a semiconductor body. A lower edge of the gate electrode has a profile which is not horizontal, i.e., not planar with respect to the field electrode.