The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 14, 2009
Filed:
Jun. 19, 2006
Holger Kapels, Holzkirchen, DE;
Anton Mauder, Kolbermoor, DE;
Hans-joachim Schulze, Ottobrunn, DE;
Helmut Strack, München, DE;
Jenoe Tihanyi, Kirchheim, DE;
Holger Kapels, Holzkirchen, DE;
Anton Mauder, Kolbermoor, DE;
Hans-Joachim Schulze, Ottobrunn, DE;
Helmut Strack, München, DE;
Jenoe Tihanyi, Kirchheim, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
The present invention relates to a metal-semiconductor contact comprising a semiconductor layer and comprising a metallization applied to the semiconductor layer, a high dopant concentration being introduced into the semiconductor layer such that a non-reactive metal-semiconductor contact is formed between the metallization and the semiconductor layer. The metallization and/or the semiconductor layer are formed in such a way that only a fraction of the introduced doping concentration is electrically active, and a semiconductor layer doped only with this fraction of the doping concentration only forms a Schottky contact when contact is made with the metallization. Furthermore, the invention relates to a semiconductor component comprising a drain zone, body zones embedded therein and source zones again embedded therein. The semiconductor component has metal-semiconductor contacts in which the contacts made contact only with the source zones but not with the body zones.