The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 14, 2003
Filed:
Jul. 23, 2001
Applicant:
Inventors:
Eric Baudelot, Weisendorf, DE;
Manfred Bruckmann, Nuremburg, DE;
Heinz Mitlehner, Uttenreuth, DE;
Dietrich Stephani, Bubenreuth, DE;
Benno Weis, Hemhofen, DE;
Assignee:
Siemens Aktiengesellschaft, Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 1/7687 ;
U.S. Cl.
CPC ...
H03K 1/7687 ;
Abstract
A hybrid power MOSFET, comprising a MOSFET and a junction FET, the MOSFET and the junction FET being electrically connected in series is disclosed. In accordance with the present invention, the hybrid power MOSFET is provided with a device for reducing the change in the gate voltage of the junction FET. Thus, a hybrid power MOSFET is obtained in which high over-voltages no longer arise and whose EMC response is much improved.