The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 17, 2012
Filed:
Jan. 13, 2009
Alexandre Ellison, Linköping, SE;
Björn Magnusson, Linköping, SE;
Asko Vehanen, Esbo, FI;
Dietrich Stephani, Bubenreuth, DE;
Heinz Mitlehner, Uttenreuth, DE;
Peter Friedrichs, Nürnberg, DE;
Alexandre Ellison, Linköping, SE;
Björn Magnusson, Linköping, SE;
Asko Vehanen, Esbo, FI;
Dietrich Stephani, Bubenreuth, DE;
Heinz Mitlehner, Uttenreuth, DE;
Peter Friedrichs, Nürnberg, DE;
Norstel AB, Norrköping, SE;
Siced Electronics Development GmbH & Co. KG, Erlangen, DE;
Abstract
A method for manufacturing a silicon carbide single crystal. A silicon carbide single crystal is grown. The crystal has a boron concentration less than 5×10cm, and a concentration of transition metals impurities less than 5×10cm. Intrinsic defects in the crystal are minimised. The intrinsic defects include silicon vacancies or carbon vacancies. The crystal is annealed for a desired time at a temperature above 700° C. in an atmosphere containing any of the gases hydrogen or a mixture of hydrogen and an inert gas, such that the density of intrinsic defects and any associated defects is decreased to a concentration low enough to confer to the crystal a desired carrier life time of at least 50 ns at room temperature.