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For the Inventor, By the Inventor

Erlangen, Germany

Rudolf Elpelt

USPTO Granted Patents = 39 

 

Average Co-Inventor Count = 3.8

ph-index = 4

Forward Citations = 162(Granted Patents)


Location History:

  • Brlangen, DE (2010)
  • Erlangen, DE (2006 - 2024)

Company Filing History:

goldMedal29 out of 14,705 
 
Infineon Technologies Ag
 patents
silverMedal7 out of 2,093 
 
Infineon Technologies Austria Ag
 patents
bronzeMedal2 out of 20 
 
Siced Electronics Development Gmbh & Co Kg
 patents
4. 1 out of 12 
 
Infineon Technology Ag
 patents

Years Active: 2006-2025

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39 patents (USPTO):
1. 12266694 - Silicon carbide device with a stripe-shaped trench gate structure (2025-04-01),
2. 12176396 - Semiconductor device including current spread region (2024-12-24),
3. 12119377 - SiC devices with shielding structure (2024-10-15),
4. 11888032 - Method of producing a silicon carbide device with a trench gate (2024-01-30),
5. 11757031 - Power transistor with integrated Schottky diode (2023-09-12),
6. 11735633 - Silicon carbide device with trench gate structure and method of manufacturing (2023-08-22),
7. 11626477 - Silicon carbide field-effect transistor including shielding areas (2023-04-11),
8. 11552173 - Silicon carbide device with trench gate (2023-01-10),
9. 11552170 - Semiconductor device including current spread region (2023-01-10),
10. 11462611 - SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof (2022-10-04),
11. 11437470 - Silicon carbide semiconductor component (2022-09-06),
12. 11380756 - Silicon carbide device with Schottky contact (2022-07-05),
13. 11367775 - Shielding structure for SiC devices (2022-06-21),
14. 11145755 - Silicon carbide semiconductor component with edge termination structure (2021-10-12),
15. 11101343 - Silicon carbide field-effect transistor including shielding areas (2021-08-24),

Title: Rudolf Elpelt - Innovator in Semiconductor Technology

Introduction

Rudolf Elpelt is a prominent inventor based in Erlangen, Germany, known for his groundbreaking work in semiconductor technology. With an impressive portfolio of 38 patents, Elpelt has made significant contributions that enhance the efficiency and functionality of semiconductor devices.

Latest Patents

Among Elpelt's latest inventions, the patent for a "Semiconductor device including current spread region" stands out. This innovative device features a silicon carbide (SiC) semiconductor body with a unique current spread region that has a precisely engineered doping concentration profile. Additionally, another noteworthy patent, "SiC devices with shielding structure," presents a semiconductor device designed to better shield its structure from electric fields, thereby improving performance and reliability.

Career Highlights

Elpelt has had a distinguished career, having worked with esteemed companies in the semiconductor industry. He contributed significantly to Infineon Technologies AG and Infineon Technologies Austria AG, where he further advanced his expertise and engaged in cutting-edge research and development.

Collaborations

Throughout his career, Elpelt has collaborated with several notable professionals, including coworkers Caspar Leendertz and Roland Rupp. Their collective expertise has contributed to the success of various innovative semiconductor projects.

Conclusion

Rudolf Elpelt remains a key figure in the field of semiconductor technology, with a rich portfolio that reflects his dedication to innovation. His patents not only demonstrate his inventive spirit but also pave the way for advancements that impact various applications in the tech industry.

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