The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 01, 2025
Filed:
Dec. 28, 2023
Infineon Technologies Ag, Neubiberg, DE;
Caspar Leendertz, Munich, DE;
Thomas Basler, Chemnitz, DE;
Paul Ellinghaus, Unterhaching, DE;
Rudolf Elpelt, Erlangen, DE;
Michael Hell, Erlangen, DE;
Jens Peter Konrath, Villach, AT;
Shiqin Niu, Freising, DE;
Dethard Peters, Höchstadt, DE;
Konrad Schraml, Feldkirchen, DE;
Bernd Leonhard Zippelius, Erlangen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.