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For the Inventor, By the Inventor

Erlangen, Germany

Michael Hell

This inventor holds 18 USPTO granted patents and 15 published patent applications and 1 EPO patent, primarily in Silicon Carbide Devices. Top assignee: Infineon Technologies Ag. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Michael Hell. Retrieved from https://idiyas.com/inventor/michael-hell

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 72.2


Average Co-Inventor Count = 4.2

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:

goldMedal18 out of 15,036 
 
Infineon Technologies Ag
 patents

Years Active: 2021-2026

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Areas of Expertise:
Silicon Carbide
Trench Gate
Ion Beam Implantation
Power Transistor
Schottky Diode
Field Termination
Charge Balance
Current Spread
Shielding Structure
Superjunction Device
Vertical Power Device
Field-Effect Transistor
18 patents (USPTO):Explore Patents
1. 12745432 - Method for forming a drift region of a superjunction device (2026-09-22),
2. 12721070 - Ion beam implantation method and semiconductor device (2026-08-25),
3. 12696517 - Semiconductor device and method for manufacturing a semiconductor device (2026-07-28),
4. 12628373 - Semiconductor device having a field termination structure and a charge balance structure, and method of producing the semiconductor device (2026-05-12),
5. 12604504 - Shielding structure for silicon carbide devices (2026-04-14),
6. 12294018 - Vertical power semiconductor device including silicon carbide (sic) semiconductor body (2025-05-06),
7. 12266694 - Silicon carbide device with a stripe-shaped trench gate structure (2025-04-01),
8. 12176396 - Semiconductor device including current spread region (2024-12-24),
9. 12119377 - SiC devices with shielding structure (2024-10-15),
10. 11908694 - Ion beam implantation method and semiconductor device (2024-02-20),
11. 11888032 - Method of producing a silicon carbide device with a trench gate (2024-01-30),
12. 11757031 - Power transistor with integrated Schottky diode (2023-09-12),
13. 11626477 - Silicon carbide field-effect transistor including shielding areas (2023-04-11),
14. 11552173 - Silicon carbide device with trench gate (2023-01-10),
15. 11552170 - Semiconductor device including current spread region (2023-01-10),

Title: Inventor Michael Hell - Revolutionizing Technology in Erlangen

Introduction: Michael Hell is a visionary inventor based in Erlangen, Germany, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Michael Hell holds several patents in the areas of artificial intelligence, renewable energy, and medical devices, showcasing his diverse range of expertise and innovative spirit.

Career Highlights: With a career spanning over two decades, Michael Hell has worked with leading tech companies and research institutions, consistently pushing the boundaries of what is possible in the world of technology.

Collaborations: Throughout his career, Michael Hell has collaborated with top engineers, scientists, and researchers globally, fostering a culture of innovation and excellence in all his projects.

Conclusion: Michael Hell's relentless pursuit of innovation and his passion for creating technology that makes a difference continue to inspire the next generation of inventors and innovators worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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