The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 22, 2026
Filed:
Jun. 22, 2022
Infineon Technologies Ag, Neubiberg, DE;
Michael Hell, Erlangen, DE;
Dethard Peters, Hoechstadt, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method for forming a drift region of a superjunction device includes forming a drift region section having a semiconductor layer with first regions of a first doping type and second regions of a second doping type arranged alternatingly in a first lateral direction. Forming the drift region section includes: forming an implantation mask on top of a first surface of the semiconductor layer and including first openings; in a first implantation process, implanting dopant atoms of the first doping type through the first openings into the first surface; increasing a size of the first openings to obtain second openings; in a second implantation process, implanting dopant atoms of the second doping type through the second openings into the first surface; and after removing the mask, in a third implantation process, implanting dopant atoms of the first doping type into the first surface.