The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 10, 2026
Filed:
Oct. 18, 2024
Infineon Technologies Ag, Neubiberg, DE;
Thomas Aichinger, Faak am See, AT;
Dethard Peters, Höchstadt, DE;
Michael Hell, Erlangen, DE;
Andreas Hürner, Heroldsberg, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A vertical power semiconductor device includes a silicon carbide (SiC) semiconductor body having opposite first and second surfaces. The SiC semiconductor body includes a transistor cell area including gate structures, a gate pad area, and an interconnection area electrically coupling a gate electrode of the gate structures and a gate pad of the gate pad area via a gate interconnection. The vertical power semiconductor device further includes a sensor electrode and a first interlayer dielectric having a first interface to the sensor electrode and a second interface to at least one of the gate electrode or the gate interconnection. A conduction band offset at the first interface ranges from 1 eV to 2.5 eV. The vertical power semiconductor device further includes a second interface to at least one of the gate electrode or the gate interconnection. The second interlayer dielectric laterally adjoins to the first interlayer dielectric.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile