This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Infineon Technologies Ag. Active years: 2025.
Company Filing History:
Years Active: 2025
Title: Biography of Inventor Andreas Hürner
Introduction: Andreas Hürner is a notable inventor based in Heroldsberg, Germany. He has made significant contributions to the field of power semiconductor devices, particularly through his innovative work with silicon carbide technology.
Latest Patents: Hürner holds a patent for a vertical power semiconductor device that includes a silicon carbide (SiC) semiconductor body. This device features a first surface and a second surface opposite to the first surface. The SiC semiconductor body comprises a transistor cell area with gate structures, a gate pad area, and an interconnection area that electrically couples a gate electrode to a gate pad via a gate interconnection. Additionally, the device includes a source or emitter electrode and a first interlayer dielectric with specific conduction band offsets.
Career Highlights: Andreas Hürner is currently employed at Infineon Technologies AG, a leading company in semiconductor solutions. His work focuses on advancing power semiconductor technologies, which are crucial for various applications in electronics and energy management.
Collaborations: Throughout his career, Hürner has collaborated with esteemed colleagues such as Thomas Aichinger and Dethard Peters. These collaborations have further enhanced the development and implementation of innovative semiconductor technologies.
Conclusion: Andreas Hürner's contributions to the field of power semiconductors, particularly through his patented innovations, underscore his role as a key figure in advancing