The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 30, 2024
Filed:
Dec. 02, 2022
Infineon Technologies Ag, Neubiberg, DE;
Caspar Leendertz, Munich, DE;
Thomas Basler, Chemnitz, DE;
Paul Ellinghaus, Unterhaching, DE;
Rudolf Elpelt, Erlangen, DE;
Michael Hell, Erlangen, DE;
Jens Peter Konrath, Villach, AT;
Shiqin Niu, Freising, DE;
Dethard Peters, Hoechstadt, DE;
Konrad Schraml, Feldkirchen, DE;
Bernd Leonhard Zippelius, Erlangen, DE;
Infineon Technologies AG, Neubiberg, DE;
Abstract
A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.