Infineon Technologies Ag

Infineon Technologies Austria Ag

Siced Electronics Development Gmbh & Co Kg

Infineon Technology Ag

Rudolf Elpelt

Caspar Leendertz

Roland Rupp

Dethard Peters

Michael Hell

Romain Esteve

Bernd Zippelius

Hans-Joachim Schulze

Ralf Siemieniec

Wolfgang Bergner

Jens Peter Konrath

Thomas Basler

Larissa Wehrhahn-Kilian

Shiqin Niu

Paul Ellinghaus

Thomas Aichinger

Michael Treu

Peter Friedrichs

Daniel Kueck

Christian Hecht

Anton Mauder

Heinz Mitlehner

Florian Grasse

Thomas Ganner

Konrad Schraml

Reinhold Schoerner

Reinhold Schörner

Ravi Keshav Joshi

Michael Rueb

Karl-Otto Dohnke

Karl Dohnke

A silicon carbide device includes: a transistor cell having a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; at least one source region of a first conductivity type in contact with the first gate sidewall; and a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. No source regions of the first conductivity type are in contact with a second gate sidewall of the gate structure.

Silicon carbide device with a stripe-shaped trench gate structure

A semiconductor device includes a silicon carbide semiconductor body. A first shielding region of a first conductivity type is connected to a first contact at a first surface of the silicon carbide semiconductor body. A current spread region of a second conductivity type is connected to a second contact at a second surface of the silicon carbide semiconductor body. A doping concentration profile of the current spread region includes peaks along a vertical direction perpendicular to the first surface. A doping concentration of one peak or one peak-group of the peaks is at least 50% higher than a doping concentration of any other peak of the current spread region. A vertical distance between the one peak or the one peak-group of the current spread region and the first surface is larger than a second vertical distance between the first surface and a maximum doping peak of the first shielding region.

Semiconductor device including current spread region

A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.

SiC devices with shielding structure

A method of producing a silicon carbide (SiC) device includes: forming a stripe-shaped trench gate structure that extends from a first surface of a SiC body into the SiC body, the gate structure having a gate length along a lateral first direction, a bottom surface and a first gate sidewall of the gate structure being connected via a first bottom edge of the gate structure; forming at least one source region of a first conductivity type; and forming a shielding region of a second conductivity type in contact with the first bottom edge of the gate structure across at least 20% of the gate length. Forming the shielding region includes: forming a deep shielding portion; and forming a top shielding portion between the first surface and the deep shielding portion, the top shielding portion being in contact with the first bottom edge.

Method of producing a silicon carbide device with a trench gate

According to an embodiment of a semiconductor device, the device includes: a plurality of device cells formed in a semiconductor substrate, each device cell including a transistor structure and a Schottky diode structure; and a superjunction structure that includes alternating regions of a first conductivity type and of a second conductivity type formed in the semiconductor substrate. For each transistor structure, a channel region of the transistor structure and a Schottky metal region of an adjacent one of the Schottky diode structures are interconnected by semiconductor material of the first conductivity type without interruption by any of the regions of the second conductivity type of the superjunction structure, the semiconductor material of the first conductivity type including one or more of the regions of the first conductivity type of the superjunction structure.

Power transistor with integrated Schottky diode

A silicon carbide device includes a silicon carbide body having a hexagonal crystal lattice with a c-plane and with further main planes. The further main planes include a-planes and m-planes. A mean surface plane of the silicon carbide body is tilted to the c-plane by an off-axis angle. The silicon carbide body includes a columnar portion with column sidewalls. At least three of the column sidewalls are oriented along a respective one of the further main planes. A trench gate structure is in contact with the at least three of the column sidewalls.

Silicon carbide device with trench gate structure and method of manufacturing

A semiconductor component includes: gate structures extending from a first surface into an SiC semiconductor body; a drift zone of a first conductivity type formed in the SiC semiconductor body; first mesas and second mesas arranged between the gate structures in the SiC semiconductor body; body areas of a second conductivity type arranged in the first mesas and the second mesas, the body areas each adjoining a first side wall of one of the gate structures; first shielding areas of the second conductivity type adjoining a second side wall of one of the gate structures; second shielding areas of the second conductivity type adjoining the body areas in the second mesas; and diode areas of the conductivity type of the drift zone, the diode areas forming Schottky contacts with a load electrode between the first shielding areas and the second shielding areas.

Silicon carbide field-effect transistor including shielding areas

A silicon carbide device includes a stripe-shaped trench gate structure extending from a first surface into a silicon carbide body. The gate structure has a gate length along a lateral first direction. A bottom surface and an active first gate sidewall of the gate structure are connected via a first bottom edge of the gate structure. The silicon carbide device further includes at least one source region of a first conductivity type. A shielding region of a second conductivity type is in contact with the first bottom edge of the gate structure across at least 20% of the gate length.

Silicon carbide device with trench gate

A semiconductor device includes gate trenches formed in a SiC substrate and extending lengthwise in parallel in a first direction. A trench interval which defines a space between adjacent gate trenches extends in a second direction perpendicular to the first direction. Source regions of a first conductivity type formed in the SiC substrate occupy a first part of the space between adjacent gate trenches. Body regions of a second conductivity type opposite the first conductivity type formed in the SiC substrate and below the source regions occupy a second part of the space between adjacent gate trenches. Body contact regions of the second conductivity type formed in the SiC substrate occupy a third part of the space between adjacent gate trenches. Shielding regions of the second conductivity type formed deeper in the SiC substrate than the body regions adjoin a bottom of at least some of the gate trenches.

SiC device with channel regions extending along at least one of the (1-100) plane and the (-1100) plane and methods of manufacturing thereof

The disclosure relates to a semiconductor component having an SiC semiconductor body and a first load terminal on a first surface of the SiC semiconductor body. A second load terminal is formed on a second surface of the SiC semiconductor body opposite the first surface. The semiconductor component has a drift zone of a first conductivity type in the SiC semiconductor body and a first semiconductor area of a second conductivity type which is electrically connected to the first load terminal. A pn junction between the drift zone and the first semiconductor area defines a voltage blocking strength of the semiconductor component.

Silicon carbide semiconductor component

A silicon carbide device includes a silicon carbide body including a source region of a first conductivity type, a cathode region of the first conductivity type and separation regions of a second conductivity type. A stripe-shaped gate structure extends along a first direction and adjoins the source region and the separation regions. The silicon carbide device includes a first load electrode. Along the first direction, the cathode region is between two separation regions of the separation regions and at least one separation region of the separation regions is between the cathode region and the source region. The source region and the first load electrode form an ohmic contact. The first load electrode and the cathode region form a Schottky contact.

Silicon carbide device with Schottky contact

A semiconductor device includes: a SiC substrate; a device structure in or on the SiC substrate and subject to an electric field during operation of the semiconductor device; a current-conduction region of a first conductivity type in the SiC substrate below and adjoining the device structure; and a shielding region of a second conductivity type laterally adjacent to the current-conduction region and configured to at least partly shield the device structure from the electric field. The shielding region has a higher net doping concentration than the current-conduction region, and has a length (L) measured from a first position which corresponds to a bottom of the device structure to a second position which corresponds to a bottom of the shielding region. The current-conduction region has a width (d) measured between opposing lateral sides of the current-conduction region, and L/d is in a range of 1 to 10.

Shielding structure for SiC devices

A semiconductor component includes a SiC semiconductor body having an active region and an edge termination structure at least partly surrounding the active region. A drift zone of a first conductivity type is formed in the SiC semiconductor body. The edge termination structure includes: a first doped region of a second conductivity type between a first surface of the SiC semiconductor body and the drift zone, the first doped region at least partly surrounding the active region and being spaced apart from the first surface; a plurality of second doped regions of the second conductivity type between the first surface and the first doped region; and third doped regions of the first conductivity type separating adjacent second doped regions of the plurality of second doped regions from one another in a lateral direction.

Silicon carbide semiconductor component with edge termination structure

A semiconductor component has a gate structure that extends from a first surface into an SiC semiconductor body. A body area in the SiC semiconductor body adjoins a first side wall of the gate structure. A first shielding area and a second shielding area of the conductivity type of the body area have at least twice as high a level of doping as the body area. A diode area forms a Schottky contact with a load electrode between the first shielding area and the second shielding area.

Growing community of inventors

Erlangen, Germany

Rudolf Elpelt