The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Mar. 22, 2002
Peter Friedrichs, Nürnberg, DE;
Dethard Peters, Höchstadt, DE;
Reinhold Schoerner, Grossenseebach, DE;
Peter Friedrichs, Nürnberg, DE;
Dethard Peters, Höchstadt, DE;
Reinhold Schoerner, Grossenseebach, DE;
SiCED Electronics Development GmbH & Co. KG, Erlangen, DE;
Abstract
The semiconductor device includes a first semiconductor region made from n-conducting SiC and a second semiconductor region made from p-conducting SiC. A Schottky contact layer electrically contacts the first semiconductor region, and an ohmic p-contact layer electrically contacts the second semiconductor region. Both contact layers consist of a nickel-aluminum material. This allows both contact layers to be annealed together without adversely effecting the Schottky contact behavior.