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Roland Rupp

USPTO Granted Patents = 129 (Patent Applications = 14)

Average Co-Inventor Count = 3.4

ph-index = 11

Forward Citations = 518(Granted Patents)

Forward Citations (Not Self Cited) = 496(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Lauf an der Pegnitz, DE (2016)
Erlanden, DE (2018)
Erlangen, DE (2018 - 2020)
Lauf, DE (1998 - 2024)

Company Filing History:

108 out of 14,724

Infineon Technologies Ag

10 out of 2,094

Infineon Technologies Austria Ag

8 out of 30,045

Siemens Aktiengesellschaft

Siced Electronics Development Gmbh & Co Kg

Infineon Technology Ag

Years Active: 1998-2025

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Areas of Expertise:

Silicon Carbide

Semiconductor Devices

Wafer Composite

Epitaxial Growth

Trench Gate Structure

Wide Band Gap Semiconductors

Passivation Layer

Junction Termination

Micromechanical Structures

Electrical Devices

Substrate Processing

Laser Modified Zones

129 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12412740 - Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device (2025-09-09),

2. 12302619 - Silicon carbide components and methods for producing silicon carbide components (2025-05-13),

3. 12300724 - Method of manufacturing silicon carbide semiconductor devices (2025-05-13),

4. 12272738 - Methods of forming semiconductor devices in a layer of epitaxial silicon carbide (2025-04-08),

5. 12027591 - Method for forming a semiconductor device and a semiconductor device (2024-07-02),

6. 11887894 - Methods for processing a wide band gap semiconductor wafer using a support layer and methods for forming a plurality of thin wide band gap semiconductor wafers using support layers (2024-01-30),

7. 11881406 - Method of manufacturing a semiconductor device and semiconductor wafer (2024-01-23),

8. 11881397 - Semiconductor device with a porous portion, wafer composite and method of manufacturing a semiconductor device (2024-01-23),

9. 11869840 - Silicon carbide device and method for forming a silicon carbide device (2024-01-09),

10. 11854926 - Semiconductor device with a passivation layer and method for producing thereof (2023-12-26),

11. 11756917 - Method for processing a semiconductor wafer, semiconductor wafer, clip and semiconductor device (2023-09-12),

12. 11735642 - Methods of re-using a silicon carbide substrate (2023-08-22),

13. 11721547 - Method for manufacturing a silicon carbide substrate for an electrical silicon carbide device, a silicon carbide substrate and an electrical silicon carbide device (2023-08-08),

14. 11715768 - Silicon carbide components and methods for producing silicon carbide components (2023-08-01),

15. 11712749 - Parent substrate, wafer composite and methods of manufacturing crystalline substrates and semiconductor devices (2023-08-01),

Title: The Innovative Mind of Roland Rupp

Introduction: Roland Rupp, a distinguished inventor hailing from Lauf, Germany, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Roland Rupp's latest patents showcase his expertise in developing cutting-edge solutions for various industries, including telecommunications, renewable energy, and automotive.

Career Highlights: Throughout his illustrious career, Roland Rupp has demonstrated a remarkable ability to transform innovative ideas into tangible inventions that have revolutionized the way we live and work. His passion for pushing the boundaries of technology has led to numerous successful ventures and patents.

Collaborations: Roland Rupp has collaborated with leading research institutions, universities, and companies around the world to further his inventions and bring them to market. His collaborative spirit and dedication to excellence have earned him the respect of his peers in the industry.

Conclusion: In conclusion, Roland Rupp's relentless pursuit of innovation and his exceptional talent as an inventor have solidified his reputation as a trailblazer in the world of technology. His contributions continue to inspire future generations of inventors to push the limits of what is possible.

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