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For the Inventor, By the Inventor

Matsumoto, Japan

Akimasa Kinoshita

This inventor holds 55 USPTO granted patents and 13 published patent applications, primarily in Silicon Carbide Semiconductors (CPC class H01L). Top assignees: Fuji Electric Co., Ltd., National Institute of Advanced Industrial Science and Technology, Sumitomo Electric Industries, Limited. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akimasa Kinoshita. Retrieved from https://idiyas.com/inventor/akimasa-kinoshita

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 55 

% Patents Active = 92.7

Average Co-Inventor Count = 1.9

ph-index = 4

Forward Citations = 55(Granted Patents)

Forward Citations (Not Self Cited) = 45(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Tsukuba, JP (2016 - 2018)
  • Nagano, JP (2017 - 2023)
  • Matsumoto, JP (2017 - 2024)

Company Filing History:

goldMedal55 out of 4,826 
 
Fuji Electric Co., Ltd.
 patents
silverMedal1 out of 1,766 
 
National Institute of Advanced Industrial Science and Technology
 patents
bronzeMedal1 out of 10,647 
 
Sumitomo Electric Industries, Limited
 patents
where one patent can have more than one assignee

Years Active: 2016-2026

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Areas of Expertise:
Silicon Carbide
Semiconductor Device
Manufacturing Method
Insulated Gate
Power Device
High Speed Characteristics
Injection Suppression
Trench Formation
Device Structure
Circuit Device
55 patents (USPTO):Explore Patents
1. 12520551 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2026-01-06),
2. 12408401 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2025-09-02),
3. 12183819 - Silicon carbide semiconductor device (2024-12-31),
4. 12132083 - Silicon carbide semiconductor device (2024-10-29),
5. 12027617 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2024-07-02),
6. 11721756 - Semiconductor device (2023-08-08),
7. 11695045 - Silicon carbide semiconductor device and silicon carbide semiconductor circuit device (2023-07-04),
8. 11631765 - Method of manufacturing insulated gate semiconductor device with injection suppression structure (2023-04-18),
9. 11610990 - Silicon carbide semiconductor device (2023-03-21),
10. 11569376 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2023-01-31),
11. 11424357 - Semiconductor device (2022-08-23),
12. 11411105 - Silicon carbide semiconductor device (2022-08-09),
13. 11329151 - Insulated-gate semiconductor device and method of manufacturing the same (2022-05-10),
14. 11239356 - Semiconductor device and method of manufacturing semiconductor device (2022-02-01),
15. 11158713 - Semiconductor device (2021-10-26),

Title: The Innovative Journey of Akimasa Kinoshita

Introduction: Akimasa Kinoshita is a pioneering inventor hailing from Matsumoto, Japan, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Akimasa Kinoshita holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his continuous dedication to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Kinoshita has worked with renowned research institutions and leading tech companies, where he has played a pivotal role in developing cutting-edge solutions that have revolutionized various industries.

Collaborations: Throughout his career, Akimasa Kinoshita has collaborated with top engineers, scientists, and researchers from around the globe, fostering a culture of innovation and knowledge sharing that has led to the creation of transformative technologies.

Conclusion: Akimasa Kinoshita's relentless pursuit of innovation and his passion for creating solutions that make a difference in the world have solidified his position as a visionary inventor in the realm of technology. His work continues to inspire future generations of inventors and innovators to push the boundaries of what is possible.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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