The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jun. 25, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device includes a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, first base regions of a second conductivity type, second base regions of the second conductivity type, a second semiconductor layer of the second conductivity type, first semiconductor regions of the first conductivity type, second semiconductor regions of the second conductivity type, gate insulating films, gate electrodes, an interlayer insulating film, first electrodes, a second electrode, and trenches. Between adjacent first base regions, at least two of the trenches, at least two of the gate electrodes, and at least two of the second base regions are disposed, the second base regions disposed between the adjacent first base regions being disposed separate from one another and separate from the first base regions, in a direction in which the trenches are arranged.