The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 23, 2022
Filed:
Jan. 27, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Akimasa Kinoshita, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A semiconductor device, including a semiconductor substrate of a first conductivity type, a first semiconductor layer of the first conductivity type, provided on the semiconductor substrate and having an impurity concentration lower than that of the semiconductor substrate, a second semiconductor layer of a second conductivity type, selectively provided on the first semiconductor layer, a plurality of first semiconductor regions of the first conductivity type, selectively provided in the second semiconductor layer at a surface thereof, a plurality of gate insulating films in contact with the second semiconductor layer, a plurality of gate electrodes respectively provided on the gate insulating films, a plurality of first electrodes provided on the second semiconductor layer and the first semiconductor regions, and a second electrode provided on a back surface of the semiconductor substrate. The semiconductor substrate contains boron, a concentration of the boron therein being in a range from 5×10/cmto 5×10/cm.