The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2024
Filed:
Nov. 01, 2021
Fuji Electric Co., Ltd., Kawasaki, JP;
Akimasa Kinoshita, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
A voltage withstanding structure disposed in an edge termination region is a spatial modulation junction termination extension (JTE) structure formed by a combination of a JTE structure and a field limiting ring (FLR) structure. All FLRs configuring the FLR structure are surrounded by an innermost one of p-type regions configuring the JTE structure. An innermost one of the FLRs is disposed overlapping a p-type extension and the innermost one of the p-type regions, at a position overlapping a border between the p-type extension and the innermost one of the p-type regions. The FLRs are formed concurrently with p-type contact regions in an active region and have an impurity concentration substantially equal to an impurity concentration of the p-type contact regions. An n-type channel stopper region is formed concurrently with n-type source regions in the active region and has an impurity concentration substantially equal to an impurity concentration the n-type source regions.