The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 10, 2022
Filed:
Sep. 26, 2018
Fuji Electric Co., Ltd., Kawasaki, JP;
FUJI ELECTRIC CO., LTD., Kawasaki, JP;
Abstract
An insulated-gate semiconductor device includes: an n-type current spreading layer disposed on an n-type drift layer; a p-type base region disposed on the current spreading layer; a n-type main-electrode region arranged in an upper portion of the base region; an insulated-gate electrode structure provided in a trench; and a p-type gate-bottom protection-region being in contact with a bottom of the trench, including a plurality of openings through which a part of the current spreading layer penetrates, being selectively buried in the current spreading layer, wherein positions of the openings cut on both sides of a central line of the trench are shifted from each other about the central line in a longitudinal direction of the trench in a planar pattern.