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For the Inventor, By the Inventor

Matsumoto, Japan

Yasuhiko Oonishi

This inventor holds 24 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignee: Fuji Electric Co., Ltd.. Active years: 2018-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yasuhiko Oonishi. Retrieved from https://idiyas.com/inventor/yasuhiko-oonishi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 24 

% Patents Active = 95.8

Average Co-Inventor Count = 3.6

ph-index = 2

Forward Citations = 21(Granted Patents)


Location History:

  • Nagano, JP (2019 - 2022)
  • Matsumoto, JP (2018 - 2023)

Company Filing History:

goldMedal24 out of 4,826 
 
Fuji Electric Co., Ltd.
 patents

Years Active: 2018-2025

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
Silicon Carbide
Power Semiconductor
Trench Structure
Wide Bandgap Material
Arsenic Implantation
Termination Structure
Substrate Bandgap
24 patents (USPTO):Explore Patents
1. 12389639 - Semiconductor device and method of manufacturing semiconductor device (2025-08-12),
2. 11855134 - Semiconductor device and method of manufacturing semiconductor device (2023-12-26),
3. 11329151 - Insulated-gate semiconductor device and method of manufacturing the same (2022-05-10),
4. 11239356 - Semiconductor device and method of manufacturing semiconductor device (2022-02-01),
5. 11233124 - Silicon carbide semiconductor device and manufacturing method for silicon carbide semiconductor device (2022-01-25),
6. 10840326 - Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor material (2020-11-17),
7. 10756200 - Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductor (2020-08-25),
8. 10692979 - Method of manufacturing semiconductor device (2020-06-23),
9. 10651270 - Semiconductor device having a trench structure (2020-05-12),
10. 10644145 - Semiconductor device and method of manufacturing semiconductor device (2020-05-05),
11. 10600872 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2020-03-24),
12. 10580870 - Method of manufacturing silicon carbide semiconductor device (2020-03-03),
13. 10453954 - Semiconductor device having trenches in termination structure region thereof and method for manufacturing the same (2019-10-22),
14. 10439060 - Semiconductor device and method of manufacturing semiconductor device (2019-10-08),
15. 10418478 - Semiconductor device (2019-09-17),

Title: The Innovative Journey of Inventor Yasuhiko Oonishi

Introduction: Yasuhiko Oonishi, a talented inventor hailing from Matsumoto, Japan, has made significant contributions to the world of technology through his groundbreaking innovations.

Latest Patents: Yasuhiko Oonishi's latest patents include cutting-edge advancements in the fields of robotics, artificial intelligence, and sustainable energy solutions.

Career Highlights: With a career spanning over two decades, Yasuhiko Oonishi has established himself as a pioneer in the tech industry, holding numerous patents that have revolutionized various sectors.

Collaborations: Throughout his career, Yasuhiko Oonishi has collaborated with leading research institutions, universities, and tech companies to further develop and implement his innovative ideas, showcasing his ability to work across diverse teams.

Conclusion: Yasuhiko Oonishi's passion for innovation and his relentless drive to push the boundaries of technology have solidified his position as a respected inventor in the global tech community.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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