The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Jun. 28, 2018
Fuji Electric Co., Ltd., Kawasahi-shi, Kanagawa, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
In a termination structure region, a first semiconductor layer of a first conductivity type, with an impurity concentration lower than that of a semiconductor substrate, is provided on the substrate of the first conductivity type. A second semiconductor layer of a second conductivity type is provided on a first side of the first semiconductor layer, opposite to a second side facing the substrate. Trenches penetrate the second semiconductor layer. At the first side in the first semiconductor layer, a first semiconductor region of the second conductivity type, with an impurity concentration higher than that of the second semiconductor layer, is provided at a side closer to an active region, contacting the second semiconductor layer. A second semiconductor region of the first conductivity type is provided in the second semiconductor layer, outside and adjacent to one of the trenches that is disposed at a farthest position from the active region.