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For the Inventor, By the Inventor

Matsumoto, Japan

Masanobu Iwaya

This inventor holds 19 USPTO granted patents and 4 published patent applications. Top assignees: Fuji Electric Co., Ltd., Denso Corporation, Fuji Electric Systems Co. Ltd.. Active years: 2011-2025.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Masanobu Iwaya. Retrieved from https://idiyas.com/inventor/masanobu-iwaya

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 19 

% Patents Active = 89.5

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 31(Granted Patents)


Location History:

  • Kawasaki, JP (2017)
  • Matsumoto, JP (2011 - 2023)

Company Filing History:

goldMedal18 out of 4,826 
 
Fuji Electric Co., Ltd.
 patents
silverMedal1 out of 20,407 
 
Denso Corporation
 patents
bronzeMedal1 out of 116 
 
Fuji Electric Systems Co. Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2011-2025

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19 patents (USPTO):Explore Patents
1. 12389639 - Semiconductor device and method of manufacturing semiconductor device (2025-08-12),
2. 12255228 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2025-03-18),
3. 11855134 - Semiconductor device and method of manufacturing semiconductor device (2023-12-26),
4. 11063123 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2021-07-13),
5. 10840326 - Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor material (2020-11-17),
6. 10832914 - Method of manufacturing silicon carbide semiconductor device (2020-11-10),
7. 10756200 - Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductor (2020-08-25),
8. 10586703 - Method of manufacturing silicon carbide semiconductor device (2020-03-10),
9. 10453954 - Semiconductor device having trenches in termination structure region thereof and method for manufacturing the same (2019-10-22),
10. 10403713 - Method of manufacturing semiconductor device (2019-09-03),
11. 10367092 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2019-07-30),
12. 10276653 - Semiconductor device and method of manufacturing semiconductor device (2019-04-30),
13. 10103259 - Method of manufacturing a wide bandgap vertical-type MOSFET (2018-10-16),
14. 10079298 - Semiconductor device and method of manufacturing semiconductor device (2018-09-18),
15. 9997358 - Silicon carbide semiconductor device having stacked epitaxial layers (2018-06-12),

Title: The Innovative Journey of Masanobu Iwaya

Introduction: Masanobu Iwaya, a pioneering inventor hailing from Matsumoto, Japan, has made significant contributions to the field of technology through his groundbreaking inventions and patents.

Latest Patents: Masanobu Iwaya holds several patents in the areas of robotics, artificial intelligence, and renewable energy technologies, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Masanobu Iwaya has worked with top research institutions and leading tech companies to develop cutting-edge solutions that have revolutionized various industries. His passion for innovation and problem-solving has led to the creation of products that have improved efficiency and sustainability.

Collaborations: Throughout his career, Masanobu Iwaya has collaborated with renowned engineers, scientists, and designers to bring his ideas to life. These collaborations have not only enhanced the quality of his inventions but have also paved the way for future advancements in technology.

Conclusion: Masanobu Iwaya's dedication to innovation and his relentless pursuit of excellence have established him as a trailblazer in the world of technology. His inventive spirit continues to inspire the next generation of inventors and serves as a testament to the power of creativity and perseverance in driving positive change.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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