The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 2018
Filed:
Jul. 01, 2016
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Akimasa Kinoshita, Matsumoto, JP;
Yasuyuki Hoshi, Matsumoto, JP;
Yuichi Harada, Matsumoto, JP;
Yoshiyuki Sakai, Matsumoto, JP;
Masanobu Iwaya, Matsumoto, JP;
Mina Ryo, Tsukuba, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;
Abstract
A semiconductor device includes on an n-type semiconductor substrate of silicon carbide, an n-type semiconductor layer, a p-type base region, an n-type source region, a p-type contact region, a gate insulating film, a gate electrode, and a source electrode. The semiconductor device has a drain electrode on a back surface of the semiconductor substrate. On a surface of the gate electrode, an interlayer insulating film is disposed. The interlayer insulating film has plural layers among which, one layer is formed by a silicon nitride film. With such a structure, degradation of semiconductor device properties are suppressed. Further, increases in the number of processes at the time of manufacturing are suppressed.