Matsumoto, Japan

Yuichi Harada


Average Co-Inventor Count = 3.1

ph-index = 6

Forward Citations = 141(Granted Patents)

Forward Citations (Not Self Cited) = 133(Dec 10, 2025)


Location History:

  • Tsukuba, JP (2015)
  • Nagano, JP (1999 - 2018)
  • Matsumoto, JP (2011 - 2024)

Company Filing History:


Years Active: 1999-2025

Loading Chart...
Areas of Expertise:
Semiconductor Device
Silicon Carbide
High Voltage Apparatus
Vertical Field Effect Transistor
Insulated Gate Thyristor
Low On Resistance
Hydrogen Occlusion
Transistor Technology
Breaking Withstand Capability
Manufacturing Method
Electro-Static Discharge
Level Shift Circuit
50 patents (USPTO):Explore Patents

Title: The Innovations of Yuichi Harada: A Pioneer in Semiconductor Technology

Introduction: Yuichi Harada, a prominent inventor based in Matsumoto, Japan, has made significant contributions to the field of semiconductor technology. With 48 patents to his name, his work has been instrumental in enhancing the capabilities and efficiency of semiconductor devices. His latest innovations showcase his commitment to improving breaking withstand capability and optimizing donor concentration distribution in semiconductor substrates.

Latest Patents: Among Harada's most recent patents are two key inventions focused on the design and fabrication of semiconductor devices. The first patent introduces a semiconductor device featuring a drift region of a first conductivity type within a semiconductor substrate, accompanied by a base region of a second conductivity type and an emitter region of the first conductivity type. This innovative design incorporates a series of trench portions arranged in a specific array direction on the front surface of the substrate. The trench contact, located between adjacent trench portions, is engineered to enhance device performance by facilitating a stable connection between the emitter region and a contact layer with higher doping concentration.

The second patent addresses a semiconductor device and its manufacturing method, which includes a thoughtfully structured donor concentration distribution. This device comprises multiple donor concentration peaks at various depths, ensuring optimal performance across the semiconductor substrate. The flat region, positioned between the first and second donor concentration peaks, is specifically designed to maintain a stable concentration that significantly enhances the functionality of the semiconductor device.

Career Highlights: Yuichi Harada has garnered extensive experience throughout his career by working with reputable organizations such as Fuji Electric Co., Ltd. and the National Institute of Advanced Industrial Science and Technology. His work within these institutions has allowed him to refine his skills and expand his research horizons, making him a key figure in semiconductor innovation.

Collaborations: Harada has collaborated with esteemed colleagues like Yasuyuki Hoshi and Noriyuki Iwamuro, sharing knowledge and expertise to further develop cutting-edge semiconductor technologies. These collaborations have contributed not only to Harada's personal growth as an inventor but also to the overall advancement of the semiconductor industry.

Conclusion: Yuichi Harada's dedication to semiconductor innovations is evident through his impressive portfolio of 48 patents. His latest inventions demonstrate a deep understanding of semiconductor device design and fabrication, as well as a commitment to enhancing their performance. As technology continues to evolve, Harada's contributions will undoubtedly play a crucial role in shaping the future of semiconductor technology.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…