The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 24, 2022
Filed:
Sep. 28, 2020
Fuji Electric Co., Ltd., Kanagawa, JP;
Yasunori Agata, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Misaki Meguro, Matsumoto, JP;
Naoko Kodama, Matsumoto, JP;
Yoshihiro Ikura, Matsumoto, JP;
Seiji Noguchi, Matsumoto, JP;
Yuichi Harada, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.