Matsumoto, Japan

Yoshihiro Ikura

This inventor holds 30 USPTO granted patents and 13 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Fuji Electric Co., Ltd., Fuji Electric., Ltd., Fuji Electric Device Technology Co., Ltd.. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yoshihiro Ikura. Retrieved from https://idiyas.com/inventor/yoshihiro-ikura

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 80.0


Average Co-Inventor Count = 2.2

ph-index = 3

Forward Citations = 34(Granted Patents)


Location History:

  • Kanagawa, JP (2014 - 2015)
  • Nagano, JP (2005 - 2016)
  • Matsumoto, JP (2011 - 2024)

Company Filing History:


Years Active: 2005-2026

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Areas of Expertise:
Semiconductor Device
Dielectric Breakdown
IGBT Cells
Floating Mesa
Insulated Gate Bipolar Transistor
Trench Gate Technology
Surge Voltage Protection
Schottky Barrier Diode
Low-Dielectric-Constant Film
Manufacturing Method
High Power Devices
Level Shift Circuit
30 patents (USPTO):Explore Patents

Title: Innovations in Semiconductor Technology by Yoshihiro Ikura

Introduction

Yoshihiro Ikura, based in Matsumoto, Japan, is an accomplished inventor with an impressive portfolio of 23 patents. His significant contributions to semiconductor technology have influenced various advancements in the field. With a background in leading companies, Ikura has established himself as a pioneer in developing reliable and efficient semiconductor devices.

Latest Patents

Yoshihiro Ikura's latest patents focus on enhancing the performance and durability of semiconductor devices. One notable patent describes a semiconductor device comprising a drift region of a first conductivity type situated in a semiconductor substrate, a base region of a second conductivity type above the drift region, and an emitter region of the first conductivity type above the base region. This invention aims to improve breaking withstand capability through a sophisticated array of trench portions on the semiconductor substrate's surface, enhancing the electrical performance while ensuring a reliable interface between components.

Another significant patent details a semiconductor device featuring a drift region and a buffer region, which have multiple concentration peaks in the doping profile. This innovative design facilitates better performance in depth direction, making strides in the functionality and reliability of semiconductor applications.

Career Highlights

Ikura has an extensive career, working with reputable companies including Fuji Electric Co., Ltd. and Fuji Electric Device Technology Co., Ltd. His tenure at these organizations allowed him to refine his expertise in semiconductor technology and drive innovations from concept to realization.

Collaborations

Throughout his career, Yoshihiro Ikura has collaborated with talented individuals such as Yuichi Harada and Yosuke Sakurai. These collaborative efforts have contributed to the successful development and patenting of various technologies, showcasing the power of teamwork in advancing engineering concepts.

Conclusion

Yoshihiro Ikura's work in semiconductor technology exemplifies significant advancements that stem from innovative thinking and collaboration. His patents not only address critical challenges but also pave the way for future developments in the semiconductor industry. With numerous achievements under his belt, Ikura continues to inspire future inventors and engineers.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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