Semiconductor device

Abstract

A semiconductor device, including a semiconductor substrate, a first semiconductor region, a plurality of second semiconductor regions, a plurality of third semiconductor regions, a fourth semiconductor region, a plurality of trenches provided in the semiconductor substrate, a plurality of first electrodes respectively provided in the plurality of trenches, an interlayer insulating film, a second electrode, and a third electrode. The trenches are disposed at equal intervals, so as to have a plurality of mesa portions formed therebetween. The trenches include a plurality of gate trenches and a plurality of dummy trenches. The first electrodes include a plurality of gate electrodes and a plurality of dummy electrodes. The plurality of mesa portions includes a plurality of first mesa portions, each first mesa portion being adjacent to one of the gate trenches at least at one sidewall thereof, and including one of the second semiconductor regions that has a floating potential.