For the Inventor, By the Inventor

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Kanagawa, Japan

Fuji Electric., Ltd.

USPTO Granted Patents = 191

EPO Patents = 4

Forward Citations = 10

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241 inventors (with patents filed for the assignee):

Takashi Yoshimura (8 out of 79 patents)

Motoyoshi Kubouchi (7 out of 52 patents)

Seiji Noguchi (6 out of 29 patents)

4. Yosuke Sakurai (6 out of 24 patents)

5. Shinsuke Harada (5 out of 75 patents)

6. Hiroshi Takishita (5 out of 58 patents)

7. Yoshihiro Ikura (5 out of 30 patents)

8. Misaki Uchida (5 out of 8 patents)

9. Yoshinari Ikeda (4 out of 62 patents)

10. Motohito Hori (4 out of 35 patents)

11. Keishirou Kumada (4 out of 17 patents)

12. Shigeki Sato (4 out of 14 patents)

13. Ryuji Yamada (4 out of 4 patents)

14. Taisuke Fukuda (4 out of 4 patents)

15. Akimasa Kinoshita (4 out of 4 patents)

Core Competencies:

Semiconductor Module

Silicon Carbide

Power Converter

Integrated Circuit

Overcurrent Protection

Temperature Sensor

Cooling Apparatus

Multi-Chip Switching

Leakage Current

IGBT

Manufacturing Method

Terminal Structure

191 patents: Sort by Forward Citations

1. 12745635 - Semiconductor device (2026-09-22),

2. 12745433 - Semiconductor device (2026-09-22),

3. 12745418 - Semiconductor device and method of manufacturing semiconductor device (2026-09-22),

4. 12740354 - Semiconductor device and method for manufacturing the same (2026-09-15),

5. 12740080 - Insulated gate bipolar transistor (2026-09-15),

6. 12738854 - Semiconductor oscillation suppression circuit (2026-09-15),

7. 12733528 - Manufacturing method for semiconductor device (2026-09-08),

8. 12733494 - Semiconductor element bonding portion and semiconductor device (2026-09-08),

9. 12733227 - Silicon carbide semiconductor device and method of manufacturing the same (2026-09-08),

10. 12733218 - Semiconductor device with a first parallel pn structure in the active region and a second parallel pn structure in the termination region wherein the depth of the second parallel structure becomes stepwise shallower towards the periphery (2026-09-08),

11. 12733216 - Manufacturing method of forming a buffer region of semiconductor device and semiconductor device (2026-09-08),

12. 12733184 - Semiconductor device (2026-09-08),

13. 12732088 - Power conversion apparatus (2026-09-08),

14. 12730122 - Fluid measurement system and fluid measurement method (2026-09-08),

15. 12727524 - Semiconductor apparatus and semiconductor apparatus manufacturing method (2026-09-01),

Fuji Electric is a global company that provides innovative products and solutions in the fields of energy, industrial automation, and electronics. With a focus on sustainability and environmental responsibility, Fuji Electric offers a wide range of products including power semiconductors, industrial systems, and energy solutions. The company has a strong international presence and a commitment to delivering high-quality products and services to customers worldwide.

This text is generated by artificial intelligence and may not be accurate.

Company Badge

USPTO Data Jan 1 1976 - Sep 22 2026

191 Patents

#19 in Kanagawa

#730 in Japan

#4,399 in the World

Kanagawa, Japan

Fuji Electric., Ltd.

Forward Citations = 10

241 inventors:

Takashi Yoshimura (8 out of 79 patents)

Motoyoshi Kubouchi (7 out of 52 patents)

Seiji Noguchi (6 out of 29 patents)

4. Yosuke Sakurai (6 out of 24 patents)

5. Shinsuke Harada (5 out of 75 patents)

Please report any incorrect information to [email protected]

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