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Kanagawa, Japan

Fuji Electric., Ltd.

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USPTO Granted Patents = 222

EPO Patents = 4

Forward Citations = 10

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266 inventors (with patents filed for the assignee):

Motoyoshi Kubouchi (8 out of 53 patents)

Takashi Yoshimura (8 out of 79 patents)

Shinsuke Harada (6 out of 77 patents)

4. Yoshihiro Ikura (6 out of 31 patents)

5. Seiji Noguchi (6 out of 29 patents)

6. Yosuke Sakurai (6 out of 24 patents)

7. Hiroshi Takishita (5 out of 58 patents)

8. Misaki Uchida (5 out of 8 patents)

9. Akimasa Kinoshita (5 out of 5 patents)

10. Yoshinari Ikeda (4 out of 62 patents)

11. Kaname Mitsuzuka (4 out of 17 patents)

12. Hayato Nakano (4 out of 21 patents)

13. Motohito Hori (4 out of 35 patents)

14. Keishirou Kumada (4 out of 17 patents)

15. Shigeki Sato (4 out of 14 patents)

Core Competencies:

Semiconductor Module

Silicon Carbide

Power Converter

Integrated Circuit

Overcurrent Protection

Temperature Sensor

Cooling Apparatus

Multi-Chip Switching

Leakage Current

IGBT

Manufacturing Method

Terminal Structure

222 patents: Sort by Forward Citations

1. 12787848 - Semiconductor module and semiconductor device (2026-11-03),

2. 12787799 - Semiconductor module and manufacturing method therefor (2026-11-03),

3. 12787716 - Method of manufacturing semiconductor device by forming aluminum alloy film and removing possible defects in semiconductor chips (2026-11-03),

4. 12787394 - Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device (2026-11-03),

5. 12787353 - Silicon carbide semiconductor device (2026-11-03),

6. 12787318 - Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor device (2026-11-03),

7. 12787317 - Capacitor device (2026-11-03),

8. 12782413 - Test jig, testing method, and method of manufacturing semiconductor device (2026-11-03),

9. 12781716 - Geothermal power generation system (2026-11-03),

10. 12777929 - Semiconductor device (2026-10-27),

11. 12772869 - Semiconductor module having heat dissipation base surrounded by elastic member, power converter containing the same, and power converter manufacturing method therefor (2026-10-20),

12. 12772515 - Semiconductor device and semiconductor module (2026-10-20),

13. 12772474 - Semiconductor device having reduced risk of dielectric breakdown (2026-10-20),

14. 12772473 - Semiconductor device and method of manufacturing the same (2026-10-20),

15. 12771341 - Switching control circuit (2026-10-20),

Company Overview

Fuji Electric, Ltd. is a prominent player in the semiconductor devices sector, headquartered in Kanagawa, Japan. The company specializes in the development and manufacturing of advanced semiconductor modules, including silicon carbide technologies and power converters. Its expertise extends to integrated circuits, overcurrent protection systems, temperature sensors, and cooling apparatuses, as well as multi-chip switching solutions. Fuji Electric is committed to innovation in power electronics, contributing to various industries through its cutting-edge technologies.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Nov 3 2026

222 Patents

#19 in Kanagawa

#659 in Japan

#3,850 in the World

Kanagawa, Japan

Fuji Electric., Ltd.

Forward Citations = 10

266 inventors:

Motoyoshi Kubouchi (8 out of 53 patents)

Takashi Yoshimura (8 out of 79 patents)

Shinsuke Harada (6 out of 77 patents)

4. Yoshihiro Ikura (6 out of 31 patents)

5. Seiji Noguchi (6 out of 29 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Fuji Electric., Ltd.. Retrieved from https://idiyas.com/company/fuji-electric

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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