Matsumoto, Japan

Shigeki Sato

This inventor holds 14 USPTO granted patents and 2 published patent applications and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Fuji Electric Co., Ltd., Fuji Electric., Ltd.. Active years: 2017-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Shigeki Sato. Retrieved from https://idiyas.com/inventor/shigeki-sato-k92r6nsh

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 14 

% Patents Active = 100.0


Average Co-Inventor Count = 1.4

ph-index = 2

Forward Citations = 6(Granted Patents)


Location History:

  • Nagano, JP (2019)
  • Matsumoto, JP (2017 - 2023)

Company Filing History:


Years Active: 2017-2026

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Areas of Expertise:
Semiconductor Device
Overcurrent Protection
Power Module
Reverse-Conducting IGBT
Drive Circuit
Sense Diode
Insulated Gate
Vibration Suppression
Wafer Test Method
Current Control
Voltage Control
14 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Shigeki Sato

Introduction

Shigeki Sato is a distinguished inventor based in Matsumoto, Japan, renowned for his significant contributions to the field of semiconductor technology. With a remarkable portfolio comprising nine patents, Sato has showcased his inventive prowess through various groundbreaking devices designed to enhance performance and efficiency in electronics.

Latest Patents

Among Sato's recent innovations, two notable patents stand out. The first is a sophisticated semiconductor device that integrates a semiconductor substrate with a temperature sensing unit on its front surface. This device features an anode pad and a cathode pad that are electrically connected to the temperature sensing unit, alongside a front surface electrode assigned to a predetermined reference potential. Additionally, it incorporates a bidirectional diode unit connected in a serial bidirectional manner between the cathode pad and the front surface electrode, potentially arranged between the anode pad and the cathode pad on the surface.

His second patent expands on these concepts, describing a semiconductor device that also includes a temperature sensing unit on the front surface of a semiconductor substrate. It further details an output comparison diode unit placed between the anode pad and the cathode pad, with the temperature sensing unit featuring a temperature sensing diode. This design offers advanced functionalities tailored for sophisticated electronic systems.

Career Highlights

Shigeki Sato's career is marked by his association with Fuji Electric Co., Ltd., where he has made significant strides in semiconductor research and development. His innovative designs and contributions have helped elevate the standards of semiconductor devices, ensuring greater reliability and efficiency in various applications.

Collaborations

Throughout his career, Sato has collaborated with esteemed colleagues, including Ryu Araki and Hiroshi Miyata. These partnerships have fostered a collaborative environment that promotes the exchange of ideas and leads to the development of pioneering technologies that push the boundaries of what is achievable in the semiconductor industry.

Conclusion

In summary, Shigeki Sato's inventive spirit and technical expertise have made him an influential figure in the semiconductor domain. His latest patents reflect a commitment to innovation that not only addresses current technological challenges but also paves the way for future advancements in electronics. As the industry continues to evolve, Sato's contributions will undoubtedly play a crucial role in shaping the future landscape of semiconductor technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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