The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 27, 2019

Filed:

Feb. 22, 2018
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventor:

Shigeki Sato, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/872 (2006.01); H01L 27/07 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0664 (2013.01); H01L 27/0727 (2013.01); H01L 29/0615 (2013.01); H01L 29/0646 (2013.01); H01L 29/7397 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 27/067 (2013.01); H01L 27/0611 (2013.01); H01L 27/075 (2013.01); H01L 27/0711 (2013.01); H01L 27/0716 (2013.01); H01L 27/0755 (2013.01); H01L 29/0619 (2013.01); H01L 29/0649 (2013.01);
Abstract

A semiconductor device is provided, in which a loss of a sensing element is small. A semiconductor device including a semiconductor substrate is provided, the semiconductor device including: an upper-surface electrode that is provided on an upper surface of the semiconductor substrate; a sensing electrode that is provided on the upper surface of the semiconductor substrate and is separated from the upper-surface electrode; a lower-surface electrode that is provided on a lower surface of the semiconductor substrate; a main transistor portion that is provided on the semiconductor substrate and is connected to the upper-surface electrode and the lower-surface electrode; a main diode portion that is provided on the semiconductor substrate and is connected to the upper-surface electrode and the lower-surface electrode; and a sense diode portion that is provided to the semiconductor substrate and is connected to the sensing electrode and the lower-surface electrode.


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