The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Aug. 30, 2019
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventor:

Shigeki Sato, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 25/18 (2006.01); H01L 27/06 (2006.01); H01L 49/02 (2006.01); H01L 29/06 (2006.01); H01L 29/861 (2006.01); H03K 17/567 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 25/18 (2013.01); H01L 27/0635 (2013.01); H01L 28/60 (2013.01); H01L 29/0696 (2013.01); H01L 29/861 (2013.01); H03K 17/567 (2013.01); H03K 2217/0063 (2013.01); H03K 2217/0072 (2013.01);
Abstract

A power module which includes a power semiconductor module chip, a driver chip and a charge storage element. The power semiconductor module chip is configured by forming an IGBT having a trench gate structure including a dummy trench gate, and a freewheeling diode for returning excess carrier of the emitter of the IGBT to the collector of the IGBT, in the same chip. The drive chip is used for driving the IGBT on/off. The power module is configured by packaging the power semiconductor module chip and the drive chip. The charge storage element that is connected between the gate and emitter of a dummy IGBT which can be pseudo-formed in order that the dummy trench gate be used in screening examinations.


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