The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Jun. 30, 2016
Applicant:
Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;
Inventor:
Shigeki Sato, Matsumoto, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kawasaki-shi, Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/739 (2006.01); H01L 29/868 (2006.01); H01L 29/49 (2006.01); H01L 27/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7397 (2013.01); H01L 27/0658 (2013.01); H01L 29/4236 (2013.01); H01L 29/4916 (2013.01); H01L 29/868 (2013.01);
Abstract
A semiconductor device, including a semiconductor substrate, an active region formed on the semiconductor substrate, and a gate runner disposed to surround the active region. The active region includes a first cell group in which a gate electrode of each cell is directly connected to the gate runner, and a second cell group in which a gate electrode of each cell is connected to the gate runner via a di/dt mitigating element. The di/dt mitigating element is a capacitor, a resistor connected in parallel to a capacitor, or an inverse-parallel-connected diode.