The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 23, 2025

Filed:

Feb. 24, 2022
Applicant:

Fuji Electric Co., Ltd., Kanagawa, JP;

Inventors:

Shigeki Sato, Azumino, JP;

Soichi Yoshida, Matsumoto, JP;

Kouji Asahi, Shiojiri, JP;

Seiji Momota, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); G01K 7/01 (2006.01); H01L 23/528 (2006.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); G01K 7/01 (2013.01); H01L 23/528 (2013.01); H10D 62/127 (2025.01); H10D 64/519 (2025.01);
Abstract

Provided is a semiconductor device including: a first trench portion having a predetermined first trench length; a second trench portion having a second trench length longer than the first trench length; a first gate runner portion configured to be electrically connected to an end portion of the first trench portion; and a second gate runner portion configured to be electrically connected to the first gate runner portion and electrically connected to an end portion of the second trench portion. A resistivity per unit length of the first gate runner portion is larger than a resistivity per unit length of the second gate runner portion.


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