The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
May. 18, 2022
Applicant:
Fuji Electric Co., Ltd., Kanagawa, JP;
Inventors:
Yasunori Agata, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Misaki Meguro, Matsumoto, JP;
Naoko Kodama, Matsumoto, JP;
Yoshihiro Ikura, Matsumoto, JP;
Seiji Noguchi, Matsumoto, JP;
Yuichi Harada, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
Assignee:
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/739 (2006.01); H01L 21/22 (2006.01); H01L 21/265 (2006.01); H01L 21/268 (2006.01); H01L 29/32 (2006.01); H01L 29/40 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01);
U.S. Cl.
CPC ...
H01L 21/221 (2013.01); H01L 21/268 (2013.01); H01L 21/26526 (2013.01); H01L 27/0664 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/32 (2013.01); H01L 29/404 (2013.01); H01L 29/66348 (2013.01); H01L 29/7397 (2013.01); H01L 29/8613 (2013.01);
Abstract
A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.