The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 09, 2025
Filed:
Apr. 18, 2023
Fuji Electric Co., Ltd., Kawasaki, JP;
Yoshihiro Ikura, Matsumoto, JP;
Seiji Noguchi, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
Ryutaro Hamasaki, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device provided with a transistor section, the semiconductor device including a drift region of a first conductivity type which is provided in a semiconductor substrate, a plurality of trench portions extending from a front surface of the semiconductor substrate to the drift region, an emitter region of the first conductivity type which has a doping concentration higher than a doping concentration of the drift region and which is provided to extend from a trench portion to an adjacent trench portion among the plurality of trench portions on the front surface of the semiconductor substrate, and a trench bottom portion of a second conductivity type which is provided to a lower end of the trench portion, in which the transistor section has an electron passage region in which the trench bottom portion is not provided in a top view.