The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 09, 2025
Filed:
Aug. 01, 2022
Fuji Electric Co., Ltd., Kanagawa, JP;
Yoshihiro Ikura, Nagano, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
An insulated gate bipolar transistor includes: a gate electrode embedded in a gate trench through a gate insulating film, the gate trench penetrating an emitter region and a base region; and a dummy electrode embedded in a dummy trench through a dummy insulating film, the dummy trench penetrating the emitter region and the base region and being disposed on each side of the gate trench and laterally spaced from each side of the gate trench so as to laterally face the gate trench through the base region, wherein the dummy electrode includes a bottom dummy conductive member disposed at a bottom of the dummy trench such that an upper surface of the bottom dummy conductive member is located lower than a lower surface of the base region, the bottom dummy conductive member being configured to be electrically connected to a gate potential.