The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jul. 27, 2021
Fuji Electric Co., Ltd., Kanagawa, JP;
Kota Ohi, Matsumoto, JP;
Yoshihiro Ikura, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
Mutsumi Kitamura, Matsumoto, JP;
Yuichi Onozawa, Matsumoto, JP;
Yoshiharu Kato, Matsumoto, JP;
Toru Ajiki, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device, including: a drift region of a first conductivity type which is provided in a semiconductor substrate, and a buffer region of the first conductivity type which is provided between the drift region and a lower surface of the semiconductor substrate, and has three or more concentration peaks higher than a doping concentration of the drift region of the semiconductor substrate in a depth direction. Three or more of the concentration peaks includes a shallowest peak closest to the lower surface of the semiconductor substrate, a high concentration peak arranged at an upper side than the lower surface of the semiconductor substrate than the shallowest peak, and one or more low concentration peaks arranged at an upper side than the lower surface of the semiconductor substrate than the high concentration peak and of which the doping concentration is ⅕ or less of the high concentration peak.