The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 10, 2026
Filed:
Dec. 19, 2022
Fuji Electric Co., Ltd., Kawasaki, JP;
Daisuke Ozaki, Okaya, JP;
Seiji Noguchi, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
Ryutaro Hamasaki, Matsumoto, JP;
Takuya Yamada, Matsumoto, JP;
Yoshihiro Ikura, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device comprising a semiconductor substrate, the semiconductor substrate comprising an active portion, a second conductivity type circumferential well region surrounding the active portion in a top view, and a trench portion provided in the active portion on an upper surface of the semiconductor substrate, wherein the active portion includes a center portion including a first conductivity type emitter region, and a circumferential portion surrounding the center portion, wherein the center portion includes a second conductivity type active side bottom region provided across bottoms of at least two of the trench portion, the circumferential portion includes a second conductivity type circumferential side bottom region electrically connected to the circumferential well region, facing the active side bottom region, and provided at the bottom of the trench portion, and the active side bottom region and the circumferential side bottom region are provided apart from each other.