The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Apr. 21, 2023
Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Yuki Karamoto, Matsumoto-city, JP;

Kaname Mitsuzuka, Matsumoto-city, JP;

Yoshihiro Ikura, Matsumoto-city, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10D 12/00 (2025.01); H10D 8/00 (2025.01); H10D 62/10 (2025.01); H10D 64/27 (2025.01);
U.S. Cl.
CPC ...
H10D 12/481 (2025.01); H10D 8/422 (2025.01); H10D 62/127 (2025.01); H10D 64/513 (2025.01);
Abstract

Provided is a semiconductor device including a semiconductor substrate. The semiconductor substrate has: an active portion; and a plurality of gate trench portions provided in the active portion on an upper surface of the semiconductor substrate and extending along an extending direction. The semiconductor device further includes: a gate runner provided between the active portion and an end side of the semiconductor substrate; and a plurality of gate polysilicon disposed apart from each other along the end side and respectively connecting the plurality of gate trench portions to the gate runner.


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