The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2025
Filed:
Jul. 20, 2023
Fuji Electric Co., Ltd., Kanagawa, JP;
Yasunori Agata, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Misaki Meguro, Matsumoto, JP;
Naoko Kodama, Matsumoto, JP;
Yoshihiro Ikura, Matsumoto, JP;
Seiji Noguchi, Matsumoto, JP;
Yuichi Harada, Matsumoto, JP;
Yosuke Sakurai, Azumino, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.