Fuji Electric Co., Ltd.

National Institute of Advanced Industrial Science and Technology

Fuji Electric Device Technology Co., Ltd.

National Institute of Advanced Industrial Science

Yuichi Harada

Yasuyuki Hoshi

Noriyuki Iwamuro

Akimasa Kinoshita

Yasuhiko Oonishi

Shinsuke Harada

Yoshihiro Ikura

Takashi Shiigi

Tadayoshi Iwaana

Seiji Noguchi

Yosuke Sakurai

Misaki Takahashi

Kouta Yokoyama

Takashi Yoshimura

Hiroshi Takishita

Yasunori Agata

Naoko Kodama

Misaki Meguro

Norihiro Komiyama

Yoshiaki Minoya

Tatsuya Naito

Tatsuhiko Fujihira

Katsunori Ueno

Naoki Kumagai

Yoshiaki Toyoda

Masanobu Iwaya

Takeshi Ichimura

Yoshiyuki Sakai

Hisao Shigekane

Shoji Yamada

Mina Ryo

Shin Kiuchi

Shin'ichi Nakamata

Hiroshi Kanemaru

Naoki Yaezawa

Yasumasa Watanabe

Hiroshi Tobisaka

Ryu Saitou

Shouichi Furuhata

Noriyuji Iwamuro

Provided is a semiconductor device comprising a semiconductor substrate that includes a transistor region; an emitter electrode that is provided on the semiconductor substrate; a first dummy trench portion that is provided on the transistor region of the semiconductor substrate and includes a dummy conducting portion that is electrically connected to the emitter electrode; and a first contact portion that is a partial region of the transistor region, provided between an end portion of a long portion of the first dummy trench portion and an end portion of the semiconductor substrate, and electrically connects the emitter electrode and a semiconductor region with a first conductivity type provided in the transistor region.

Semiconductor device

Provided is a semiconductor device that includes a first conductivity type well region below a gate runner portion, wherein a diode region includes first contact portions, a first conductivity type anode region, and a second conductivity type cathode region; wherein the well region contacts the diode region in the first direction, and when an end of the well region, an end of at least one of first contact portions, and an end of the cathode region that face one another in the first direction are imaginary projected on an upper surface of the semiconductor substrate, a first distance is longer than a second distance, the first distance being a distance between the end of the well region and the end of the cathode region, and the second distance being a distance between the end of the well region and the end of the at least one first contact portion.

There is provided a semiconductor device including: a drift region of a first conductivity type disposed in a semiconductor substrate; a base region of a second conductivity type disposed above the drift region; an emitter region of the first conductivity type disposed above the base region; a plurality of trench portions arrayed in a predetermined array direction on a front surface side of the semiconductor substrate; a trench contact disposed on the front surface side of the semiconductor substrate between two adjacent trench portions; and a contact layer of the second conductivity type disposed under the trench contact and having a higher doping concentration than the base region, wherein a lower end of the trench contact is deeper than a lower end of the emitter region, and the emitter region and the contact layer are in contact with each other at a side wall of the trench contact.

Semiconductor device and fabrication method of semiconductor device having improved breaking withstand capability

A semiconductor device including a semiconductor substrate having an upper surface and a lower surface is provided. In a depth direction connecting the upper and lower surfaces of the semiconductor substrate, a donor concentration distribution includes a first donor concentration peak at a first depth, a second donor concentration peak at a second depth between the first donor concentration peak and the upper surface, a flat region between the first donor concentration peak and the second donor concentration peak, and a plurality of donor concentration peaks between the first donor concentration peak and the lower surface. The second donor concentration peak has a lower concentration than the first donor concentration peak. The donor concentration distribution in the flat region is substantially flat. The thickness of the flat region in the depth direction is 10% or more of the thickness of the semiconductor substrate.

Semiconductor device and manufacturing method thereof

Provided is a semiconductor device that has a plurality of gate trench portions electrically connected to a gate electrode, and a plurality of dummy trench portions electrically connected to an emitter electrode, and includes a first trench group that includes one gate trench portion and two dummy trench portions adjacent to the gate trench portion and adjacent to each other, and a second trench group that includes two gate trench portions adjacent to each other.

A semiconductor device comprising a semiconductor substrate including an upper surface and a lower surface wherein a donor concentration of a drift region is higher than a base doping concentration of the semiconductor substrate, entirely over the drift region in a depth direction connecting the upper surface and the lower surface is provided.

A semiconductor device, including a substrate, and a deposit layer and a semiconductor layer formed sequentially on the substrate. The semiconductor layer has selectively disposed therein a first region, a second region and a contact region. A gate electrode is disposed on the first region and the semiconductor layer via a gate insulating film. A source electrode is formed in contact with the contact region and the second region. A drain electrode is disposed on the back surface of the substrate. The source electrode has a first titanium (Ti) film, and a titanium nitride (TiN) film, a second Ti film, and a metal film containing aluminum (Al) sequentially formed on the first Ti film. The source electrode may further include another TiN film, on which the first Ti film is formed.

Semiconductor device and method of manufacturing semiconductor device

A semiconductor device wherein a hydrogen concentration distribution has a first hydrogen concentration peak and a second hydrogen concentration peak and a donor concentration distribution has a first donor concentration peak and a second donor concentration peak in a depth direction, wherein the first hydrogen concentration peak and the first donor concentration peak are placed at a first depth and the second hydrogen concentration peak and the second donor concentration peak are placed at a second depth deeper than the first depth relative to the lower surface is provided.

A semiconductor device includes an N-type silicon carbide layer, a P-type region, an N-type source region, a P-type contact region, a gate insulating film, a gate electrode, and a source electrode on the front surface side of an N-type silicon carbide substrate. A drain electrode is located on the back surface of the N-type silicon carbide substrate. A life time killer introduction region is located along an entire interface of the N-type silicon carbide layer and the bottom face of the P-type region. The life time killer is introduced by implanting helium or protons from the back surface side of the N-type silicon carbide substrate after forming a surface structure of an element on the front surface side of the N-type silicon carbide substrate and before forming the drain electrode.

Provided is a semiconductor device that includes: a first conductivity type anode region provided in the semiconductor substrate in the diode region; a second conductivity type drift region that is located below the anode region in the semiconductor substrate; a second conductivity type accumulation region that is located between the anode region and the drift region in a depth direction of the semiconductor substrate; and an insulating film that includes a plurality of contact portions extending in a first direction and is provided on an upper surface of the semiconductor substrate; wherein the plurality of contact portions include a first contact portion provided in the diode region; and the first contact portion includes a first non-overlapping region in which an end of the first contact portion and the accumulation region in the first direction do not overlap in the depth direction.

A semiconductor device includes a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements. A plurality of terminal pins to externally carry out voltage of the electrode pads is bonded through a plated film to all of the plurality of electrode pads by solder.

Growing community of inventors

Matsumoto, Japan

Yuichi Harada