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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10784256 B1

PDFFull Text
Date of Patent:
Sep. 22, 2020

Filed:

Sep. 30, 2016

Semiconductor device and method of manufacturing semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Takashi Shiigi, Matsumoto, JP;

Shoji Yamada, Matsumoto, JP;

Yuichi Harada, Matsumoto, JP;

Yasuyuki Hoshi, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Jared Fureman

Assistant Examiner:

Christopher J Clark

Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/78 (2006.01); H01L 27/088 (2006.01); H01L 23/00 (2006.01); H01L 21/48 (2006.01); H01L 23/498 (2006.01); H01L 23/535 (2006.01); H01L 29/16 (2006.01); H01L 27/092 (2006.01); H01L 29/861 (2006.01); H01L 21/8234 (2006.01); H01L 29/10 (2006.01); H03K 17/081 (2006.01); H03K 17/08 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0705 (2013.01); H01L 21/4853 (2013.01); H01L 23/49844 (2013.01); H01L 23/535 (2013.01); H01L 24/06 (2013.01); H01L 24/09 (2013.01); H01L 27/088 (2013.01); H01L 29/1608 (2013.01); H01L 29/7802 (2013.01); H01L 21/823487 (2013.01); H01L 27/0922 (2013.01); H01L 29/1095 (2013.01); H01L 29/16 (2013.01); H01L 29/861 (2013.01); H01L 2224/0603 (2013.01); H01L 2224/095 (2013.01); H01L 2224/0912 (2013.01); H01L 2924/10272 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H03K 17/08104 (2013.01); H03K 2017/0806 (2013.01);
Abstract

A semiconductor device includes a plurality of semiconductor switching elements disposed on a single semiconductor substrate comprising a semiconductor having a bandgap that is wider than that of silicon; and a plurality of electrode pads that are disposed in a predetermined planar layout on a front surface of the semiconductor substrate, the plurality of electrode pads each being electrically connected to the plurality of semiconductor switching elements. A plurality of terminal pins to externally carry out voltage of the electrode pads is bonded through a plated film to all of the plurality of electrode pads by solder.

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