Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor device

Abstract

A method of manufacturing a silicon carbide semiconductor device includes preparing a silicon carbide semiconductor substrate in which, on a front surface of a starting substrate of a first conductivity type, a first semiconductor layer of the first conductivity type is provided, the first semiconductor layer having an impurity concentration lower than an impurity concentration of the starting substrate. Next, at the surface of the first semiconductor layer, a second semiconductor layer of a second conductivity type is formed. Next, at the surface of the second semiconductor layer, an ohmic electrode is formed. Next, at the surface of the ohmic electrode, a Ti film and a TiN film are sequentially deposited to form a barrier metal. Next, the barrier metal is subjected to a heat treatment to form an annealed barrier metal. The heat treatment is performed in a range of 550 degrees C. to 750 degrees C.