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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10832914 B1

PDFFull Text
Date of Patent:
Nov. 10, 2020

Filed:

Jun. 18, 2019

Method of manufacturing silicon carbide semiconductor device

Applicant:

Fuji Electric Co., Ltd., Kawasaki, JP;

Inventors:

Setsuko Wakimoto, Matsumoto, JP;

Masanobu Iwaya, Matsumoto, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Mary A Wilczewski

Int. Cl.
CPC ...
H01L 21/265 (2006.01); H01L 21/04 (2006.01); H01L 29/36 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 21/8234 (2006.01); H01L 27/24 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 21/26506 (2013.01); H01L 21/046 (2013.01); H01L 29/0623 (2013.01); H01L 29/1045 (2013.01); H01L 29/1095 (2013.01); H01L 29/36 (2013.01); H01L 29/4236 (2013.01); H01L 29/66068 (2013.01); H01L 29/66734 (2013.01); H01L 29/7813 (2013.01); H01L 21/823487 (2013.01); H01L 21/823885 (2013.01); H01L 27/2454 (2013.01); H01L 29/1608 (2013.01);
Abstract

In a vertical MOSFET of a trench gate structure, a high-concentration implantation region is provided in a p-type base region formed from a p-type silicon carbide layer formed by epitaxial growth, so as to include a portion in which a channel is formed. The high-concentration implantation region is formed by ion implantation of a p-type impurity into the p-type silicon carbide layer. The high-concentration implantation region is formed by p-type ion implantation and has an impurity concentration profile in which concentration differences in a depth direction form a bell-shaped curve at a peak of impurity concentration that is higher than that of the p-type silicon carbide layer. In the p-type base region, disorder occurs partially in the crystal structure consequent to the ion implantation for forming the high-concentration implantation region.

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