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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10103259 B1

PDFFull Text
Date of Patent:
Oct. 16, 2018

Filed:

Feb. 20, 2018

Method of manufacturing a wide bandgap vertical-type mosfet

Applicant:

Fuji Electric Co., Ltd., Kawasaki-shi, Kanagawa, JP;

Inventors:

Masanobu Iwaya, Matsumoto, JP;

Makoto Utsumi, Tsukuba, JP;

Assignee:

FUJI ELECTRIC CO., LTD., Kawasaki-Shi, Kanagawa, JP;

Attorney:

Rabin & Berdo, P.C.

Primary Examiner:

Ngan Ngo

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 29/78 (2006.01); H01L 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/08 (2006.01); H01L 21/033 (2006.01); H01L 21/8238 (2006.01); H01L 21/285 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/02529 (2013.01); H01L 21/0334 (2013.01); H01L 21/28518 (2013.01); H01L 21/8238 (2013.01); H01L 21/823814 (2013.01); H01L 27/2454 (2013.01); H01L 29/0847 (2013.01); H01L 29/1608 (2013.01); H01L 29/4966 (2013.01); H01L 29/665 (2013.01); H01L 29/66068 (2013.01); H01L 29/66666 (2013.01); H01L 29/78 (2013.01); H01L 2924/13091 (2013.01);
Abstract

An interlayer insulating film is formed on a gate insulating film and a gate electrode, and the interlayer insulating film is opened forming contact holes. Next, the interlayer insulating film and regions exposed by the contact holes are covered by a titanium nitride film, and the titanium nitride film is etched to remain only at portions of the gate insulating film and the interlayer insulating film exposed in the contact holes. The interlayer insulating film and the regions exposed by the contact holes are covered by a nickel film, and after the nickel film directly contacting the interlayer insulating film is removed, the nickel film is heat treated and a nickel silicide layer is formed.

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