Semiconductor device and method of manufacturing semiconductor device

Abstract

A semiconductor device includes, as a semiconductor region in which semiconductor layers are formed, an active region through which current flows and an edge termination structure region outside the active region and in which an edge termination structure is formed. The semiconductor device includes as the semiconductor layers: a drift layer of a first conductivity type and a base layer of a second conductivity type, in contact with the edge termination region; and includes an interlayer insulating film provided on the semiconductor region, on a side thereof where the base layer is formed. The edge termination region has a first semiconductor layer of the second conductivity type, continuous from the base layer and having an outer peripheral end not in contact with the interlayer insulating film, and a second semiconductor layer of the first conductivity type, in contact with the first semiconductor layer and forming a first PN junction therewith.